PE3409 mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS =-30V,ID =-5.5A RDS(ON) < 46mΩ @ VGS=-10V RDS(ON) < 70mΩ @ VGS=-4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche volt.
General Features
* VDS =-30V,ID =-5.5A RDS(ON) < 46mΩ @ VGS=-10V RDS(ON) < 70mΩ @ VGS=-4.5V
* High density cell.
The PE3409 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in load switch and battery protection applications.
General Features
* VDS =-30V,ID =-5.5A RDS(ON) < 46mΩ @ VGS=-10V RDS(ON) <.
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